1SS184 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APLICATION)

SMD Type
Product specification
1SS184
Features
Small Package
Low forward voltage :VF(3) = 0.9 V(Typ.)
Fast Reverse Recovery Time :trr = 1.6 ns(Typ.)
Small Total Capacitance :CT = 0.9pF(Typ.)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
P aram eter
Symbol
Peak Reverse Voltage
VRM
DC Reverse Voltage
VR
Peak Reverse Voltage
IFM
Average Rectified Current
IO
Surge Current (10 ms)
IFSM
DC Forward Current
P
Junction Temperature
Tj
Storage Temperature Range
Tstg
* Unit Rating. Total Rating = Unit Rating 1.5.
Rating
85
80
300*
100*
2*
150
125
-55 to+ 125
Unit
V
V
mA
mA
A
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Continuous reverse voltage
VF
Reverse current
IR
Total capacitance
CT
Reverse recovery time
trr
Test Conditions
IF = 1.0 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0, f = 1.0 MHz
IF = 10 mA
Min
Typ
Max
Unit
0.61
0.72
V
0.9
1.2
0.1
A
0.5
0.9
3.0
pF
1.6
4.0
ns
Marking
Marking
B3
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