1SS181 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

SMD Type
Product specification
1SS181
Features
Low forward voltage. :VF(3)=0.92V(Typ.)
Fast reverse recovery time :trr=1.6ns(Typ.)
Small total capacitance :CT=2.2pF(Typ.)
3
1
2
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Peak reverse voltage
Reverse voltage
Average forward current
Peak forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VRM
85
V
VR
80
V
IO
100
mA
IFM
300
mA
IFSM
2
A
P
150
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
Testconditons
IF = 1mA
VF IF = 10mA
IF = 100mA
VR = 30V
IR
VR = 80V
CT VR = 0, f = 1MHz
trr IF = 10mA
Min Typ Max Unit
0.61
0.74
V
0.92 1.20
0.1
A
0.5
2.2 4.0 pF
1.6 4.0 ns
Marking
Marking
A3
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