1PS79SB70 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

Product specification
1PS79SB70
Features
Low forward voltage
High breakdown voltage
Guard ring protected
Ultra small plastic SMD package.
Low capacitance.
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
Absolute Maximum Ratings Ta = 25
Parameter
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forwrad current
storage temperature
junction temperature
operating ambient temperature
Symbol
VR
IF
IFSM
IFSM
Tstg
Tj
Tamb
Conditions
tp 1 s;ä 0.5
tp < 10 ms
Min
Max
Unit
70
V
70
mA
70
mA
100
mA
-65
+150
150
-65
+150
Electrical Characteristics Ta = 25
Param eter
Sym bol
continuous forward voltage
VF
IR
capacitance reverse current
diods capacitance
Cd
Note
1. Pulse test: tp = 300 s, ä = 0.02.
C o n d itio n s
IF = 1 m A
IF = 10 m A
IF = 15 m A
VR = 50 V, note 1
VR = 70 V, note 1
VR = 0 V, f = 1 MHz
Max
410
750
1
100
10
2
U n it
mV
mV
V
nA
A
pF
Marking
Marking
G
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