1PS79SB31 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

Product specification
1PS79SB31
Features
Very Low forward voltage
Guard ring protected
Ultra small plastic SMD package.
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
Absolute Maximum Ratings Ta = 25
Parameter
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forwrad current
storage temperature
junction temperature
operating ambient temperature
Symbol
Conditions
Min
Max
Unit
VR
30
V
IF
200
mA
IFSM
tp 1s;ä 0.5
300
mA
t = 8.3 ms half sinewave;
IFSM
JEDEC method
1000
mA
Tstg
-65
+150
Tj
125
Tamb
-65
+125
Electrical Characteristics Ta = 25
Parameter
Symbol
forward voltage
VF
capacitance reverse current
IR
diods capacitance
Cd
Note
1. Pulse test: pulse tp = 300 s, ä= 0.02.
Conditions
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
IF = 200 mA
VR = 10 V, note 1;
VR = 1 V, f = 1 MHz;
Typ
Max
Unit
130
190
190
250
255
300
mV
355
410
420
500
2.5
30
A
20
25
pF
Marking
Marking
G3
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