1PS79SB30 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

Product specification
1PS79SB30
Features
Very Low forward voltage
Very Low reverse current
Guard ring protected
Ultra small plastic SMD package.
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
Absolute Maximum Ratings Ta = 25
Parameter
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forwrad current
storage temperature
junction temperature
operating ambient temperature
Symbol
Conditions
Min
VR
IF
IFSM
tp 1 s;ä 0.5
t = 8.3 ms half sinewave;
IFSM
JEDEC method
Tstg
-65
Tj
Tamb
-65
Max
Unit
40
V
200
mA
300
mA
1
A
+150
150
+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Typ
Max
Unit
IF = 0.1 mA
190
220
IF = 1 mA
250
290
forward voltage
VF
IF = 10 mA
320
360
mV
IF = 100 mA
440
500
IF = 200 mA
520
600
capacitance reverse current
IR
VR = 25 V, note 1;
0.5
A
diods capacitance
Cd
VR = 1 V, f = 1 MHz;
20
pF
thermal resistance from junction to ambient
Rth j-a
450
K/W
Note
1. Pulse test: pulse width = 300 s, ä = 0.02.
Marking
Marking
G1
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