1PS79SB10 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

Features
Low forward voltage
Guard ring protected
Ultra small plastic SMD package.
Product specification
1PS79SB10
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
Absolute Maximum Ratings Ta = 25
Parameter
continuous reverse voltage
continuous forward current
repetitive peak forward current *
non-repetitive peak forward current tp < 10 ms
operating ambient temperature
thermal resistance from junction to ambient
junction temperature
storage temperature
* tp 1 s; d 0.5
Symbol
VR
IF
IFRM
IFSM
Tamb
Rthj-a
Tj
Tstg
Rating
30
200
300
600
-65 to 125
450
125
-65 to 150
Electrical Characteristics Ta = 25
Parameter
continuous forward voltage
continuous reverse current
diode capacitance
* Pulsed test: tp = 300 s;
= 0.02.
Symbol
Testconditons
IF = 0.1 mA
IF = 1 mA
VF IF = 10 mA
IF = 30 mA
IF = 100 mA
IR VR = 25 V *
Cd VR = 1 V; f = 1 MHz
Marking
Marking
F
Unit
V
mA
mA
mA
K/W
Min Typ Max Unit
240 mV
320 mV
400 mV
500 mV
800 mV
2
A
10 pF
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