1PS76SB62 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

Product specification
1PS76SB62
Features
Ultra high swiching speed
Very low capacitance
High breakdown voltage
Guard ring protected
Two pin very small plastic SMD package.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
PARAMATER
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
operating ambient temperature
SYMBOL
VR
IF
Tstg
Tj
Tamb
MIN
-65
-65
MAX
4
20
+150
125
+125
UNIT
V
mA
Electrical C haracteristics T a = 25
PARAMATER
SYMBOL
forward voltage
VF
reverse current
IR
diode capacitance
Cd
therm al resistance from junction to am bient
R thj-a
N o te :
1.Pulse test: pulse width = 300 s; ä = 0.02.
C O N D IT IO N S
IF = 2 m A;Note 1
VR = 40 V; note 1
VR = 0 V; f =1 MHz
MAX
800
1
0.6
450
U N IT
mV
A
pF
K /W
Marking
Marking
S6
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1