1PS76SB40 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

Product specification
1PS76SB40
Features
Low forward volatge
Guard ring protected
Very small plastic SMD package
Low diode capacitance.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
PARAMATER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
SYMBOL CONDITIONS
MIN
VR
IF
IFRM tp 1 s; ä 0.5
IFSM
tp < 10 ms
Tstg
-65
Tj
Tamb
-65
MAX
4
120
120
200
+150
150
+150
UNIT
V
mA
mA
mA
Electrical C haracteristics T a = 25
PARAMATER
SYMBOL
continuous forward voltage
VF
continuous reverse current
diode capacitance
therm al resistance from junction to am bient
N o te :
1.Pulse test: tp = 300 s; ä = 0.02.
IR
Cd
R thj-a
Marking
Marking
s4
C O N D IT IO N S
IF = 1 m A
IF = 10 m A
IF = 40 m A
VR = 30 V; note 1;
VR = 40 V; note 1;
VR = 0 V; f = MHz;
MAX
380
500
1
1
10
5
450
U N IT
mV
mV
V
A
A
pF
K /W
http://www.twtysemi.com
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4008-318-123
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