1PS76SB17 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

Product specification
1PS76SB17
Features
Low forward volatge
Guard ring protected
ESD > 500 V; Human body model
Very small plastic SMD package.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
PARAMATER
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
SYMBOL MIN
VR
VF
Tstg
-65
Tj
MAX
4
30
+150
100
UNIT
V
mA
Electrical Characteristics Ta = 25
PARAMATER
SYMBOL
forward volatge
VF
reverse current
IR
diode capacitance
Cd
thermal resistance from junction to ambient Rth j-a
Note
1. Refer to SOD323 standard mounting conditions.
CONDITIONS
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
VR = 3 V;
f = 1 MHz; VR = 0 V;
f = 1 MHz; VR = 0.5 V;
note 1
TYP
MAX
UNIT
300
mV
360
450
mV
470
600
mV
0.15
0.25
A
0.8
1
pF
0.65
pF
450
K/W
Marking
Marking
S7
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1