1PS59SB20 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

Product specification
1PS59SB20
Features
Ultra fast switching speed
Low forward voltage
Guard ring protoected
Small SMD package.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Non-repetitive peak forwrad current
Storage temperature
Junction temperature
Symbol
Min
VR
IF
IFSM
Tstg
-65
Tj
Max
Unit
40
V
500
mA
2
A
+150
125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
forward voltage
Symbol
VF
reverse current
IR
diode capacitance
thermal resistance from junction to ambient
Cd
Rth j-a
Conditions
IF = 500 mA
VR = 35 V
VR = 35 V, Tj = 100
f = 1 MHz; VR = 0 V
Min
Max
Unit
550
mV
100
A
10
mA
60
90
pF
500
K/W
Marking
Marking
20
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