1PS184 Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed double diode

Product specification
1PS184
Features
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:max. 80 V
Repetitive peak reverse voltage:max. 85 V
Repetitive peak forward current:max. 500 mA.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
1.Base
2.Emitter
3.collector
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
85
V
Continuous reverse voltage
VR
80
V
Continuous forward current(single diode loaded *)
---------------------------------(double diode loaded *)
IF
215
125
mA
Repetitive peak forward current
IFRM
500
mA
Non-repetitive peak forward current Tj=25 t=1 s
IFSM
4
A
t=1s
0.5
power dissipation *
PD
250
mW
Thermal resistance from junction to tie-point
Rth j-tp
250
K/W
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-65 to +150
* Device mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Forward recovery voltage
Symbol
Testconditons
IF =1 mA
IF =10 mA
VF
IF =50 mA
IF =100 mA
VR =25 V
VR =80 V
IR
VR =25 V; Tj= 150
VR =80V; Tj= 150
Cd VR =0 V, f= 1 MHz
trr
when switched from IF= 10 mA to
IR=10mA;RL=100 ; measured at IR= 1mA
Vfr IF = 10 mA, tr= 20 ns
Min Typ Max Unit
610
mV
740
mV
1.0 V
1.2 V
30 nA
0.5
A
30
A
100
A
1.5 pF
4 nS
1.75 V
Marking
Marking
B3T
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