1N5817W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
Product specification
1N5817W-1N5819W
SOD-123
2.7+0.1
-0.1
Unit: mm
1.1^+0.05
-0.05
3.7+0.1
-0.1
0.50
0.35
0.1max
Absolute Maximum Ratings Ta = 25
Parameter
Non-Repetitive Peak reverse voltage
Peak repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Peak forward surge current @=8.3ms
Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance Junction to Ambient
Storage temperature
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
IFRM
Pd
R JA
TSTG
1N5817W
20
20
14
1N5818W
30
30
21
1
25
625
250
500
-65 to 150
1N5819W
40
40
28
Unit
V
V
V
A
A
mA
mW
K/W
Electrical Characteristics Ta = 25
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
1N5817W
1N5818W
1N5819W
1N5817W
1N5818W
1N5819W
1N5817W
Forward voltage
1N5818W
Diode capacitance
1N5819W
Symbol
Testconditons
V(BR) IR= 1mA
VR=20V
IR VR=30V
VR=40V
IF=1A
IF=3A
VF ^IF=1A
IF=3A
IF=1A
IF=3A
CD VR=4V, f=1MHz
Marking
NO.
Marking
1N5817W
SJ
1N5818W
SK
1N5819W
SL
Min Typ Max Unit
20
V
30
40
1 mA
0.45 _V
0.75
0.55 _V
0.875
0.6
V
0.9
120 pF
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