1N5338B Datasheet, PDF (1/3 Pages) EIC discrete Semiconductors – SILICON ZENER DIODES

5 W Silicon Zener Diodes
Features
• High peak reverse power dissipation
• High reliability
• Low leakage current
Product specification
1N5338B THRU 1N5388B
Mechanical Data
• Epoxy: UL94V-0 rate flame retardant
• Lead: Axial lead solderable per MIL-STD-202,
method 208 guaranteed
• Polarity: Color band denotes cathode end
• Mounting position: Any
Absolute Maximum Ratings (Rating at 25 ^OC ambient temperature unless otherwise specified)
Parameter
Symbol
Value
Unit
DC Power Dissipation @ T_L = 75 ^OC ¹⁾
P_D
5
W
Junction and Storage Temperature Range
1) _{TL = Lead temperature at 3/8" (9.5 mm) from body}
T_j, T_stg
- 65 to + 200
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 A
Symbol
Max.
Unit
V_F
1.2
V
Electrical Characteristics (Rating at 25 ^OC ambient temperature unless otherwise specified)
Zener Voltage ¹⁾
Zener Impedance
Leakage Current
Type
1N5338B
1N5339B
1N5340B
1N5341B
1N5342B
1N5343B
1N5344B
V_Znom
(V)
5.1
5.6
6
6.2
6.8
7.5
8.2
V_ZT
Min.(V) Max.(V)
4.85 5.35
5.32 5.88
5.7
6.3
5.89 6.51
6.46 7.14
7.13 7.87
7.79 8.61
at I_ZT
(mA)
240
220
200
200
175
175
150
Z_ZT
Max.(Ω)
1.5
1
1
1
1
1.5
1.5
at I_ZT
(mA)
240
220
200
200
175
175
150
Z_ZK
Max.(Ω)
400
400
300
200
200
200
200
at I_ZK
(mA)
1
1
1
1
1
1
1
I_R
Max.(µA)
1
1
1
1
10
10
10
at V_R
(V)
1
2
3
3
5.2
5.7
6.2
Maximum DC
Zener Current
I_ZM
(mA)
930
856
790
765
700
630
580
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