1N4150W Datasheet, PDF (1/1 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

Features
Silicon Epitaxial Planar Diode
Fast general purpose and switching.
This diods is also available in other case styles including:
the DO-35 case with the type designation 1N4150 and
the Mini-MELF case with the type disignation LL4150.
Product specification
1N4150W
SOD-123
2.7+0.1
-0.1
Unit: mm
1.1^+0.05
-0.05
3.7+0.1
-0.1
0.50
0.35
0.1max
Absolute Maximum Ratings Ta = 25
Paramater
Symbol
Value
Unit
Peak Reverse voktage
VRM
50
V
Maximum Average Rectified Current
Io
200
mA
Maximum Power Dissipation at Tamb = 25
Ptot
410⁽¹⁾
mW
Maximum Forward Voltage Drop at IF = 200mA
VF
1.0
V
Maximum Reverse Current at VR = 50 V
IR
100
nA
Maximum Reverse Recovery Time at IF = 10 to 200 mA, to 0.1 IF
Trr
4.0
ns
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Ts
-65 to+150
NOTES::
(1) Valid provided that electrodes are kept at ambient temperature
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