1N4148S Datasheet, PDF (1/1 Pages) EIC discrete Semiconductors – HIGH SPEED SWITCHING DIODE

Features
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
Product specification
1N4148S
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Non-repetitive peak reverse voltage
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Forward continuous current
Non-repetitive peak forward surge current@ t = 1.0s
Power dissipation *
@ t = 1.0 us
Typical thermal resistance, junction to ambient air*
Operating and storage temperature range
VRM
VRRM
VRWM
VR
VR(RMS)
IO
IFM
IFSM
PD
RèJA
Tj,Tstg
100
V
75
V
53
V
150
mA
300
mA
1.0
A
2.0
150
mW
625
K/W
-65 to +150
* Part mounted on FR-4 PC board with recommended pad layout,
Electrical Characteristics Ta = 25
Parameter
Reverse Breakdown Voltage
Forwarad voltage
Peak reverse current
Capacitance
Reverse recovery time
Symbol
Testconditons
V(BR)R IR = 1.0 A
IF = 10mA
IF = 10mA
VFM
IF = 50mA
IF = 150mA
VR = 75V
VR = 75V, Tj = 150
IRM
VR = 25V, Tj = 150
VR = 20V
CT VR = 0, f = 1.0MHz
trr IF = IR =10mA,Irr = 0.1 IR, RL = 100 Ù
Marking
Marking
A
Min Typ Max Unit
75
V
0.715
0.855
V
1.0
1.25
1.0
50
A
30
25 nA
2.0 pF
4.0 ns
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