1N4148 Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed diodes

Product specification
1N4148
Features
Fast switching diode
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Reverse voltage
VR
75
V
Peak reverse voltage
VRM
100
V
Forward DC current at Tamb = 25 *
IF
200
mA
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 and f 50 Hz
*
Io
150
mA
Surge Forward Current at t < 1 s and Tj = 25
IFSM
500
mA
Power Dissipation at Tamb = 25
*
Ptot
500
mW
Junction Temperature
Tj
175
Storage Temperature Range
Tstg
-65 to +175
* Valid provided that electrodes are kept at ambient temperature.
DO34
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min Typ Max Unit
Forward voltage
VF IF=10mA
1
V
VR = 20 V
25 nA
Leakage current
IR VR = 75 V
5 ìA
VR = 20 V, Tj = 150
50 ìA
Reverse Breakdown Voltage
IR = 100ìA
V(BR)R
IR = 5.0ìA
100
V
75
Capacitance
Ctot VF = VR = 0
4 pF
Voltage rise when switching ON
tested with 50 mA forward pulses
Reverse recovery time
Vfr
tp = 0.1 ìs, Rise Time < 30 ns, fp = 5 to
100 kHz
trr
IF = 10 mA IR = 1 mA, VR = 6 V, RL =
100 Ù
2.5 V
4 ns
Thermal resistance junction to ambient air * RthJA
0.35 K/mW
Rectification efficiency
çv f = 100 MHz, VRF = 2 V
0.45
* Valid provided that electrodes are kept at ambient temperature.
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