TSH251 Datasheet, PDF (3/8 Pages) Taiwan Semiconductor Company, Ltd – Micropower CMOS Output Hall Effect Switch

TSH251
Micropower CMOS Output Hall Effect Switch
Magnetic Specifications (TSH251CT)
Parameter Symbol
Test Conditions
Min.
Operating
Point
B_OPS
B_OPN
S pole to branded side, B > B_OP, Vout On
N pole to branded side, B > B_OP, Vout On
-55
Release
B_RPS
S pole to branded side, B < B_RP, Vout Off
10
Point
B_RPN
N pole to branded side, B < B_RP, Vout Off
Hysteresis
B_HYS
|B_OPx - B_RPx|
Note: 1G (Gauss) = 0.1mT (millitesta)
Magnetic Specifications (TSH251CX)
Parameter Symbol
Test Conditions
Min.
Operating
Point
B_OPS
B_OPN
N pole to branded side, B > B_OP, Vout On
S pole to branded side, B > B_OP, Vout On
-55
Release
B_RPS
N pole to branded side, B < B_RP, Vout Off
10
Point
B_RPN
S pole to branded side, B < B_RP, Vout Off
Hysteresis
B_HYS
|B_OPx - B_RPx|
Note: 1G (Gauss) = 0.1mT (millitesta)
Output Behavior versus Magnetic Pole
DC Operating Parameters: T_A = -40 to 125^oC, V_CC = 1.8V ~ 6V
Parameter
Test condition
OUT
South pole
B<Bop[(-55)~(-10)]
Low
Null or weak magnetic field
B=0 or B < BRP
High
North pole
B>Bop(55~10)
Low
Typ.
30
-30
20
-20
10
Typ.
30
-30
20
-20
10
Max.
55
-10
Units
Gauss
Gauss
Gauss
Gauss
Gauss
Max.
55
-10
Units
Gauss
Gauss
Gauss
Gauss
Gauss
TO-92S
SOT-23
3/8
Version: A13