MBRS10H100CT_14 Datasheet, PDF (3/4 Pages) Taiwan Semiconductor Company, Ltd – Dual Common Cathode Schottky Rectifier

FIG. 5 TYPICAL JUNCTION CAPACITANCE
1000
900
f=1.0MHz
800
Vsig=50mVp-p
700
600
500
400
300
200
100
0.1
1
10
100
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
SUGGESTED PAD LAYOUT
MBRS10H100CT thru MBRS10H200CT
Taiwan Semiconductor
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
100
T-PULSE DURATION(s)
DIM.
A
B
C
D
E
F
G
H
I
J
K
Unit (mm)
Min
Max
-
10.5
14.60 15.88
2.41
2.67
0.68
0.94
2.29
2.79
4.44
4.70
1.14
1.40
1.14
1.40
8.25
9.25
0.36
0.53
2.03
2.79
Unit (inch)
Min
Max
-
0.413
0.575 0.625
0.095 0.105
0.027 0.037
0.090 0.110
0.175 0.185
0.045 0.055
0.045 0.055
0.325 0.364
0.014 0.021
0.080 0.110
Symbol
A
B
C
D
E
F
G
Unit (mm)
10.8
8.3
1.1
3.5
16.9
9.5
2.5
Unit (inch)
0.425
0.327
0.043
0.138
0.665
0.374
0.098
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1309058
Version: H13