DB3_10 Datasheet, PDF (3/3 Pages) Taiwan Semiconductor Company, Ltd – 150mW Bi-directional Trigger Diode

Small Signal Diode
Rating and Characteristic Curves
I
I_F=10m
I_BO
I_B
V
V_B=0.5*V_BO
ΔV
V_F
V_BO
DB3-DB3TG
150mW Bi-directional Trigger Diode
VBO :Break-Over Voltage
I_BO : Break-Over Current
ΔV : Dynamic Breakover Voltage
IB
: Leakage Current at V_B=0.5*V_BO
V_F : Voltage at Current I_F=10mA
Diagram 1: Test Circuit
FIG 2 Relative variation of VBO versus junction
temperature (typical values)
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
25
50
75
100
125
Tj(°C)
FIG 1 Admissible Power Dissipation Curve
160
120
80
40
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Ambient Tempeatature (^oC)
FIG 3 Repetitive peak pulse current versus pulse
duration (maximum values)
100
10
1
0.1
1
10
100
tp (μs)
Version : D10