BC856A_10 Datasheet, PDF (3/4 Pages) Taiwan Semiconductor Company, Ltd – 250mW, PNP Small Signal Transistor

Small Signal Transistor
Rating and Characteristic Curves
BC856A/B, BC857A/B/C, BC858A/B/C
250mW, PNP Small Signal Transistor
Figure 1. Static Characteristic
-50
-45
I_B = - 400µA
-40
I_B = - 350µA
-35
I_B = - 300µA
I_B = - 250µA
-30
-25
I_B = - 200µA
-20
I_B = - 150µA
-15
I_B = - 100µA
-10
I_B = - 50µA
-5
-0
-0
-2
-4
-6
-8 -10 -12 -14 -16 -18 -20
V_CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 2. DC Current Gain
1000
VCE = - 5V
100
10
-0.1
-1
-10
-100
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation
-10
IC = 10 IB
-1
VBE(sat)
-0.1
VCE(sat)
-0.01
-0.1
-1
-10
-100
IC[mA], COLLECTOR CURRENT
Figure 4. Base-Emitter On Voltage
-100
VCE = - 5V
-10
-1
-0.1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Collector Output Capacitance
f=1MHz IE=0
10
Figure 6. Current Gain Bandwidth Product
1000
f=1MHz IE=0
100
1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
10
-1
-10
IC[mA], COLLECTOR CURRENT
Version : E11