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TSM2NB60_12 Datasheet, PDF (2/10 Pages) Taiwan Semiconductor Company, Ltd – 600V N-Channel Power MOSFET
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TSM2NB60
600V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
RÓ¨JC
RÓ¨JA
IPAK/DPAK
2.87
110
Limit
ITO-220
5
62.5
TO-220
1.78
62.5
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
600
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transfer Conductance
Dynamic
VGS = 10V, ID = 1A
VDS = VGS, ID = 250uA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = 40V, ID = 1A
RDS(ON)
--
VGS(TH)
2.5
IDSS
--
IGSS
--
gfs
--
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 480V, ID = 2A,
VGS = 10V
(Note 4,5)
VDS = 25V, VGS = 0V,
f = 1.0MHz
Qg
--
Qgs
--
Qgd
--
Ciss
--
Coss
--
Crss
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VGS = 10V, ID = 2A,
VDD = 300V, RG =25Ω
(Note 4,5)
Source-Drain Diode Ratings and Characteristic
td(on)
--
tr
--
td(off)
--
tf
--
Source Current
Source Current (Pulse)
Integral reverse diode in
IS
--
the MOSFET
ISM
--
Diode Forward Voltage
IS = 2A, VGS = 0V
VSD
--
Reverse Recovery Time
VGS = 0V, IS =2A,
tfr
--
Reverse Recovery Charge
dIF/dt = 100A/us
Qfr
--
Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
Note 2: VDD = 50V, IAS=2A, L=25mH, RG =25Ω, Starting TJ=25ºC
Note 3: ISD≤2A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC
Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2%
Note 5: Essentially Independent of Operating Temperature
Typ
--
3.9
3.6
--
--
1.5
9.4
2.2
4.7
249
30.7
5
9.1
9.8
17.4
12.4
--
--
0.9
490
0.8
Max
--
4.4
4.5
10
±100
--
--
--
--
--
--
--
--
--
--
--
2
8
1.4
--
--
Unit
oC/W
oC/W
Unit
V
Ω
V
uA
nA
S
nC
pF
nS
A
A
V
nS
uC
2/10
Version: C12
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