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TSM2N7002E Datasheet, PDF (2/5 Pages) Taiwan Semiconductor Company, Ltd – 50V N-Channel Enhancement Mode MOSFET
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Electrical Characteristics
Tj = 25 oC unless otherwise noted
Parameter
Conditions
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
On-State Drain Current
Forward Transconductance
Dynamic *
VGS = 0V, ID = 10uA
VGS = 10V, ID = 250mA
VGS = 5V, ID = 50mA
VDS = VGS, ID = 250uA
VDS = 50V, VGS = 0V
VGS = ± 20V, VDS = 0V
VDS ≧ 7V, VGS = 10V
VDS = 7V, ID = 200mA
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 30V,
ID = 100mA, VGEN = 10V,
RG = 10Ω
Turn-Off Fall Time
Input Capacitance
Output Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS = 115mA, VGS = 0V
Note : pulse test: pulse width <=300uS, duty cycle <=2%
* Guaranteed by design, not subject to production testing.
Symbol
BVDSS
RDS(ON)
RDS(ON)
VGS(TH)
IDSS
IGSS
ID(ON)
gfs
TD(ON)
tr
TD(OFF)
tf
Ciss
Coss
Crss
IS
VSD
Min
50
--
--
1.0
--
--
500
80
--
--
--
--
--
--
--
--
--
Typ Max Unit
--
--
V
--
3
Ω
--
4
2.0
2.5
V
--
1.0
uA
--
± 100
nA
--
--
mA
--
--
mS
7.5
20
6
--
nS
7.5
20
3
--
19
50
10
25
pF
3
5
--
115
mA
0.76
1.5
V
TSM2N7002E
2-5
2004/12 rev. B
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