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TSM2320 Datasheet, PDF (2/5 Pages) Taiwan Semiconductor Company, Ltd – 20V N-Channel Enhancement Mode MOSFET
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Electrical Characteristics
Ta = 25 oC, unless otherwise noted
Parameter
Conditions
Symbol Min
Static
Drain-Source Breakdown Voltage VGS = 0V, ID = -250uA
BVDSS
20
Drain-Source On-State Resistance VGS = 4.5V, ID = 3A
RDS(ON)
--
Drain-Source On-State Resistance VGS = 2.5V, ID = 2A
RDS(ON)
--
Gate Threshold Voltage
VDS = VGS, ID = -250uA
VGS(TH)
0.6
Zero Gate Voltage Drain Current
VDS = 16V, VGS = 0V
IDSS
--
Gate Body Leakage
VGS = ±10V, VDS = 0V
IGSS
--
On-State Drain Current
VDS = 5V, VGS = 4.5V
ID(ON)
10
Forward Transconductance
VDS = 5V, ID = 3A
gfs
--
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 10V, ID =3.5A,
VGS = 4.5V
Qg
--
Qgs
--
Qgd
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
--
VDD = 10V, RL = 10Ω,
tr
--
ID = 1A, VGEN = 4.5V,
RG = 6Ω
td(off)
--
tf
--
Input Capacitance
Output Capacitance
Ciss
--
VDS = 15V, VGS = 0V,
f = 1.0MHz
Coss
--
Reverse Transfer Capacitance
Crss
--
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS = 1.6A, VGS = 0V
Note : pulse test: pulse width <=300uS, duty cycle <=2%
IS
--
VSD
--
Typ
--
32
50
0.9
--
--
--
8
9.1
1.4
3.2
19.6
4
26
15.7
641
135
101
--
0.81
Max Unit
--
V
45
mΩ
65
1.5
V
1.0
uA
±100
nA
--
A
--
S
--
--
nC
--
nS
--
--
pF
--
1.6
A
1.2
V
TSM2320
2-5
2005/06 rev. A
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