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TSM2318 Datasheet, PDF (2/6 Pages) Taiwan Semiconductor Company, Ltd – 40V N-Channel MOSFET
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TSM2318
40V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Static
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA
BVDSS
40
Gate Threshold Voltage
Gate Body Leakage
VDS = VGS, ID = 250µA
VGS(TH)
1
VGS = ±20V, VDS = 0V
IGSS
--
Zero Gate Voltage Drain Current
VDS = 32V, VGS = 0V
IDSS
--
On-State Drain Current
VDS ≥ 4.5V, VGS = 10V
ID(ON)
6
Drain-Source On-State Resistance
VGS = 10V, ID = 3.9A
VGS = 4.5V, ID = 3.5A
--
RDS(ON)
--
Forward Transconductance
VDS = 10V, ID = 3.9A
gfs
--
Diode Forward Voltage
Dynamicb
IS = 1.25A, VGS = 0V
VSD
--
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 20V, ID = 3.9A,
VGS = 10V
Qg
--
Qgs
--
Qgd
--
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
VDS = 20V, VGS = 0V,
f = 1.0MHz
Ciss
--
Coss
--
Crss
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 20V, RL = 20Ω,
ID = 1A, VGEN = 10V,
RG = 6Ω
td(on)
--
tr
--
td(off)
--
tf
--
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
Typ
--
--
--
--
--
36
50
11
0.8
10
1.6
2.1
540
80
45
5
12
20
15
Max Unit
--
V
3
V
±100
nA
1.0
µA
--
A
45
mΩ
62.5
--
S
1.2
V
--
--
nC
--
--
--
pF
--
--
--
nS
--
--
2/6
Version: A10
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