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TSM2311 Datasheet, PDF (2/3 Pages) Taiwan Semiconductor Company, Ltd – 20V P-Channel Enhancement Mode MOSFET
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Electrical Characteristics
Ta = 25 oC, unless otherwise noted
Parameter
Conditions
Static
Drain-Source Breakdown Voltage
Drain-Source On-State
Resistance
VGS = 0V, ID = - 250uA
VGS = - 4.5V, ID = -4.0A
Drain-Source On-State
Resistance
VGS = - 2.5V, ID = -2.5A
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
On-State Drain Current
Forward Transconductance
Dynamic
VDS = VGS, ID = - 250uA
VDS = - 16V, VGS = 0V
VGS = ± 8V, VDS = 0V
VDS ≧- 10V, VGS = -4.5V
VDS = - 5V, ID = - 4.0A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = - 6V, ID = - 4.0A,
VGS = - 4.5V
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = - 4V, RL = 4Ω,
ID = - 1A, VGEN = - 4.5V,
RG = 6Ω
Input Capacitance
Output Capacitance
VDS = - 6V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS = - 1.6A, VGS = 0V
Note : pulse test: pulse width <=300uS, duty cycle <=2%
Symbol Min
BVDSS
RDS(ON)
- 20
--
RDS(ON)
--
VGS(TH)
IDSS
IGSS
ID(ON)
gfs
- 0.45
--
--
-6
--
Qg
--
Qgs
--
Qgd
--
td(on)
--
tr
--
td(off)
--
tf
--
Ciss
--
Coss
--
Crss
--
IS
--
VSD
--
Typ
--
45
75
--
--
--
--
9
8.5
1.5
2.1
18
45
95
65
970
485
160
--
- 0.8
Max Unit
--
V
55
mΩ
85
--
V
- 1.0
uA
± 100
nA
--
A
--
S
12
--
nC
--
--
--
nS
--
--
--
--
pF
--
- 1.6
A
- 1.2
V
TSM2311
2-2
2003/12 rev. B
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