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| TSM20N50_13 Datasheet, PDF (2/10 Pages) Taiwan Semiconductor Company, Ltd – 500V N-Channel Power MOSFET | |||
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TSM20N50
500V N-Channel Power MOSFET
Thermal Performance
Parameter
Symbol
TO-220
ITO-220
Unit
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ⤠10sec
RÓ¨JC
RÓ¨JA
0.43
2.6
62.5
oC/W
Electrical Specifications (Tc = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
VGS = 0V, ID = 250uA
VGS = 10V, ID = 9.0A
VDS = VGS, ID = 250uA
BVDSS
500
--
--
V
RDS(ON)
--
0.25 0.3
â¦
VGS(TH)
2.0
--
4.0
V
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic b
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = 30V, ID = 9.0A
IS = 18A, VGS = 0V
IDSS
--
--
1
uA
IGSS
--
-- ±100 nA
gfs
--
11
--
S
VSD
--
--
1.5
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching c
VDS = 400V, ID = 18A,
VGS = 10V
VDS = 25V, VGS = 0V,
f = 1.0MHz
Qg
--
54
--
Qgs
--
15
--
nC
Qgd
--
12.5
--
Ciss
-- 3094 --
Coss
--
296
--
pF
Crss
--
9.2
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 18A,
RG = 25â¦
td(on)
tr
td(off)
tf
--
78
--
--
72
--
nS
--
184
--
--
68
--
Reverse Recovery Time
VGS = 0V, IS = 18A,
tfr
--
426
--
nS
Reverse Recovery Charge
Notes:
dIF/dt = 100A/us
Qfr
--
6
--
uC
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. Max Rating EAS Test Condition: VDD = 50V, IAS=16A, L=5mH, RG=25â¦, Starting TJ=25â
3. Guaranteed 100% EAS Test Condition: VDD = 50V, IAS=16A, L=1mH, RG=25â¦, Starting TJ=25â
4. ISD â¤18A, di/dt ⤠200A/uS, VDD ⤠BVDS, Starting TJ=25â
5. Pulse test: pulse width â¤300uS, duty cycle â¤2%
6. b For design reference only, not subject to production testing.
7. c Switching time is essentially independent of operating temperature.
2/10
Version: D13
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