English
Language : 

TSM1N60L_10 Datasheet, PDF (2/7 Pages) Taiwan Semiconductor Company, Ltd – 600V N-Channel Power MOSFET
◁
TSM1N60L
600V N-Channel Power MOSFET
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Thermal Resistance – Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board of 1 in2, 2oz Cu, t ≤ 10sec
Symbol
TL
RÓ¨JC
RÓ¨JA
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic b
VGS = 0V, ID = 250uA
VGS = 10V, ID = 0.6A
VDS = VGS, ID = 250uA
VDS = 600V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS ≧50V, ID = 0.5A
IS = 1A, VGS = 0V
BVDSS
RDS(ON)
VGS(TH)
IDSS
IGSS
gfs
VSD
600
--
2.0
--
--
--
--
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching b,c
VDS = 400V, ID = 1A,
VGS = 10V
VDS = 25V, VGS = 0V,
f = 1.0MHz
Qg
--
Qgs
--
Qgd
--
Ciss
--
Coss
--
Crss
--
Turn-On Delay Time
td(on)
--
Turn-On Rise Time
VGS = 10V, ID = 1A,
tr
--
Turn-Off Delay Time
VDS = 300V, RG = 6Ω
td(off)
--
Turn-Off Fall Time
Notes:
tf
--
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. For design reference only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Limit
10
4.16
100
Typ
--
10.5
--
--
--
10
--
8.5
1.8
4
210
28
4.2
8
21
18
24
Unit
S
oC/W
oC/W
Max Unit
--
V
12
Ω
4.0
V
10
uA
± 100 nA
--
S
1.5
V
14
--
nC
--
--
--
pF
--
--
--
nS
--
--
2/7
Version: B07
 ▷