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TSM1N45D_12 Datasheet, PDF (2/8 Pages) Taiwan Semiconductor Company, Ltd – 450V N-Channel Power MOSFET
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TSM1N45D
450V N-Channel Power MOSFET
Electrical Specifications (Ta=25oC, unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic
VGS = 0V, ID = 250uA
VGS = 10V, ID = 0.25A
VDS = VGS, ID = 250uA
VDS = VGS, ID = 250mA
VDS = 450V, VGS = 0V
VGS = ±50V, VDS = 0V
VDS = 50V, ID = 0.25A
IS = 1A, VGS = 0V
BVDSS
450
--
--
V
RDS(ON)
--
3.4 4.25
Ω
2.3
3.0
3.7
VGS(TH)
3.1
4.2
4.9
V
IDSS
--
--
10
uA
IGSS
--
--
±100 nA
gfs
--
0.7
--
S
VSD
--
--
1.5
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 360V, ID = 0.5A,
VGS = 10V
(Note 4,5)
VDS = 25V, VGS = 0V,
f = 1.0MHz
Qg
--
6.5
--
Qgs
--
0.9
--
nC
Qgd
--
3.2
--
Ciss
--
185
--
Coss
--
29
--
pF
Crss
--
6.5
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VGS = 25V, ID = 0.5A,
VDS = 225V, RG = 25Ω
(Note 4,5)
td(on)
tr
td(off)
tf
Drain-Source Diode Characteristics and Maximum Ratings
--
7.5
--
--
21
--
nS
--
23
--
--
36
--
Maximum Continuous Drain-Source Diode Forward Current
IS
--
--
0.5
A
Maximum Pulsed Drain-Source Diode Forward Current
ISM
--
--
4.0
A
Drain-Source Diode Forward Voltage VGS = 25V, IS = 0.5A
VSD
--
--
1.4
V
Reverse Recovery Time
Reverse Recovery Charge
VGS = 25V, IS = 0.5A.
dIF/dt = 100A/µS
(Note 4)
trr
--
102
--
nS
Qrr
--
0.26
--
µC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=75mH, IAS=1.6A, VDD=50V, RG=25Ω, Starting TJ=25ºC
3. ISD ≤ 0.5A, di/dt ≤ 300A/µS, VDD ≤BVDSS, Starting TJ=25ºC
4. Pulse test: pulse width ≤ 300uS, duty cycle ≤ 2%
5. Essentially independent of operating temperature
6. a) Reference point of the is the drain RÓ¨JL lead
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment
(RÓ¨JA is the sum of the junction-to-case and case-to-ambient thermal resistance. RÓ¨CA is determined by the
user’s board design)
2/8
Version: A12
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