SDBS12_1 Datasheet, PDF (2/2 Pages) Taiwan Semiconductor Company, Ltd – 1.0 AMP. Schottky Barrier Bridge Rectifiers

RATINGS AND CHARACTERISTIC CURVES (SDB(S)12 THRU SDB(S)115)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1.0
RESISTIVE OR
INDUCTIVE LOAD
SDBS12- SDBS14
SDBS15-SDBS115
0.5
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
AT RATED TL
40
8.3ms Single Half Sine Wave
JEDEC Method
30
20
PCB MOUNTED ON 0.2X0.2"
(5.0X5.0mm) COPPER PAD AREAS
0
50 60 70 80 90 100 110 120 130
LEAD TEMPERATURE. (^oC)
140 150
160 170
FIG.3- TYPICAL FORWARD CHARACTERISTICS
50
Tj=25⁰C
10.0
SDBS12-SDBS14
SDBS15-SDBS16
1
SDBS19-SDBS115
0.1
PULSE WIDTH=300 S
1% DUTY CYCLE
0.01
0
.2
.4
.6
.8 1.0 1.2 1.4
1.6
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
400
Tj=25⁰C
f=1.0MHz
Vsig=50mVp-p
100
10
0
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
100
SDBS12-SDBS14
Tj=100⁰C
10
SDBS15-SDBS16
1
SDBS19-SDBS115
0.1
Tj=25⁰C
SDBS12-SDBS14
SDBS15-SDBS115
0.01 ₀
20
40
60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
100
10
1
10
.1
1.0
10
REVERSE VOLTAGE. (V)
0.1
100
0.01
0.1
1
10
100
T, PULSE DURATION. (sec)
Version: A06