MUR160_1 Datasheet, PDF (2/2 Pages) Taiwan Semiconductor Company, Ltd – 1.0 AMPS. Glass Passivated High Efficient Rectifiers

RATINGS AND CHARACTERISTIC CURVES (MUR160 THRU MUR190)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
2
RATED V_R
R _JA = 50^OC/W
FIG.2- MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
40
1
30
20
0
10
0
50
100
150
200
250
T_A, AMBIENT TEMPERATURE (^OC)
FIG.3- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
80
MUR160
MUR190
10
0
1
10
100
NUMBER OF CYCLES AT 50 Hz
FIG.4- TYPICAL TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
100
10
1
Tj = 100^OC
1
Tj = 100^OC
0.1
Tj = 25^OC
0.1
0.01
0
0.4
0.8
1.2
1.6
2.0
2.4
INSTANTANEOUS FORWARD VOLTAGE (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
Tj = 25^OC
f = 1.0 MHz
Vsig = 50m Vp-p
0.01
Tj = 25^OC
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
10
1
0.1
MUR160
MUR190
1
10
100
REVERSE VOLTAGE (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
10W
NONINDUCTIVE NONINDUCTIVE
trr
+0.5A
(+)
50Vdc
(approx)
(-)
DUT
1W
OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
Version: A06