MMBT3904_14 Datasheet, PDF (2/4 Pages) Taiwan Semiconductor Company, Ltd – 300mW, NPN Small Signal Transistor

Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(T_A=25°C unless otherwise noted)
Fig.1 Typical Pulsed Current Gain
VS. Collector Current
500
400
125 °C
V_CE = 5V
300
25 °C
200
100
- 40 °C
0
0.1
1.0
10.0
I_C - Collector Current (mA)
100.0
Fig. 3 Base-Emitter Saturation Voltage
VS. Collector Current
1.1
1
β = 10
0.9
0.8
0.7
- 40 °C
0.6
25 °C
0.5
0.4
125 °C
0.3
0.1
1
10
100
I_C - Collector Current (mA)
1000
100
Fig. 5 Collector-Cutoff Current
VS. Ambient Temperature
V_CB= 30V
10
1
0.1
0.01
25
50
75
100
125
150
T_A - Ambient Temperature (^OC)
MMBT3904
Taiwan Semiconductor
0.20
0.15
0.10
0.05
0.00 ₀
Fig. 2 Collector-Emitter Saturation Voltage
VS. Collector Current
β = 10
125 °C
25 °C
- 40 °C
1
10
100
I_C - Collector Current (mA)
Fig. 4 Base-Emitter On Voltage
VS. Collector Current
1
V_CE= 5V
0.8
- 40 °C
0.6
25 °C
0.4
0.2
0.1
10
125 °C
1
10
100
I_C - Collector Current (mA)
Fig. 6 Capacitance VS.
Reverse Bias Voltage
f = 1.0 MHz
1
0.1
C _ibo
C_obo
1
10
100
Reverse Bias Voltage (V)
Document Number: DS_S1412034
Version: D14