MMBT3904_10 Datasheet, PDF (2/3 Pages) Taiwan Semiconductor Company, Ltd – 300mW, NPN Small Signal Transistor

Small Signal Transistor
MMBT3904
300mW, NPN Small Signal Transistor
Electrical Characteristics
Type Number
Symbol
Min
Collector-Base Breakdown Voltage
I_C= 10μA
I_E= 0
V_(BR)CBO
60
Collector-Emitter Breakdown Voltage
I_C= 1mA
I_B= 0
V_(BR)CEO
40
Emitter-Base Breakdown Voltage
I_E= 10μA
I_C= 0
V_(BR)EBO
6
Collector Cut-off Current
V_CB= 60V
I_E= 0
I_CBO
-
Collector Cut-off Current
V_CE= 30V V_BE(OFF)= 3V
I_CEO
-
Emitter Cut-offCurrent
V_EB= 5V
I_C= 0
I_EBO
-
V_CE= 1V
I_C= 10mA
100
DC current gain
V_CE= 1V
I_C= 50mA
h_FE
60
V_CE= 1V
I_C= 100mA
30
Collector-Emitter saturation voltage
I_C= 50mA
I_B= 5mA
V_CE(sat)
-
Base-Emitter saturation voltage
I_C= 50mA
I_B= 5mA
V_BE(sat)
-
Transition frequency
V_CE= 20V IC= 10mA
f= 100MHz
f_T
250
Delay time
V_CC=3V V_BE=0.5V I_C=10mA I_B1=1.0mA
t_d
-
Rise time
V_CC=3V V_BE=0.5V I_C=10mA I_B1=1.0mA
t_r
-
Storage time
V_CC=3V I_C=10mA I_B1=I_B2=1.0mA
t_s
-
Fall time
V_CC=3V I_C=10mA I_B1=I_B2=1.0mA
t_f
-
Max
Units
-
V
-
V
-
V
0.1
μA
50
nA
0.1
μA
400
-
-
0.3
V
0.95
V
-
MHz
35
nS
35
nS
200
nS
50
nS
Tape & Reel specification
TSC label
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
P0
d
P1
T
A
C
B
E
F
W
W1
D
D2
D1
Item
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
Symbol
A
B
C
d
D
D1
D2
E
F
P0
P1
T
W
W1
Dimension(mm)
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
1.50 ± 0.10
178 ± 1
55 Min
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.229 ±0.013
8.10 ±0.20
12.30 ±0.20
Direction of Feed
Version : B10