MMBT2907A Datasheet, PDF (2/3 Pages) STMicroelectronics – SMALL SIGNAL PNP TRANSISTOR

Small Signal Transistor
MMBT2907A
350mW, PNP Small Signal Transistor
Electrical Characteristics
Type Number
Symbol
Min
Collector-Base Breakdown Voltage
I_C= -10μA
I_E= 0
V_(BR)CBO
-60
Collector-Emitter Breakdown Voltage
I_C= -10mA
I_B= 0
V_(BR)CEO
-60
Emitter-Base Breakdown Voltage
I_E= -10μA
I_C= 0
V_(BR)EBO
-5
Collector Cut-off Current
V_CB= -50V
I_E= 0
I_CBO
-
Collector Cut-off Current
V_CE= -30V V_BE(OFF)= -0.5V
I_CEX
-
Base Cut-off Current
V_CE= -30V V_BE(OFF)= -0.5V
I_B
-
V_CE= -10V
I_C= -0.1mA
75
V_CE= -10V
I_C= -1mA
100
DC current gain
V_CE= -10V
I_C= -10mA
h_FE
100
V_CE= -10V
I_C= -150mA
100
V_CE= -10V
I_C= -500mA
50
Collector-Emitter saturation voltage
I_C= -150mA
I_C= -500mA
I_B= -15mA
I_B= -50mA
V_CE(sat)
-
Base-Emitter saturation voltage
I_C= -150mA
I_C= -500mA
I_B= -15mA
I_B= -50mA
V_BE(sat)
-
Transition frequency
V_CE= -20V IC= -50mA
f= 100MHz
f_T
200
Output Capacitance
V_CB=-10V I_E=0
f= 100KHz
C_obo
-
Intput Capacitance
V_EB=-2V
I_C=0
f= 100KHz
C_ibo
-
Delay time
V_CE=-30V IC=-150mA
I_B1=-15mA
t_d
-
Rise time
V_CE=-30V IC=-150mA
I_B1=-15mA
t_r
-
Storage time
V_CE=-6V
I_C=-150mA I_B1=-I_B2=-15mA
t_s
-
Fall time
V_CE=-6V
I_C=-150mA I_B1=-I_B2=-15mA
t_f
-
Tape & Reel specification
Max
Units
-
V
-
V
-
V
-20
nA
-50
nA
-50
nA
-
-
-
300
-
-0.4
V
-1.6
-1.3
V
-2.6
-
MHz
8.0
pF
30
pF
10
nS
40
nS
80
nS
30
nS
TSC label
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
P0
d
P1
T
A
C
B
E
F
W
W1
Item
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
Symbol
A
B
C
d
D
D1
D2
E
F
P0
P1
T
W
W1
Dimension(mm)
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
1.50 ± 0.10
178 ± 1
55 Min
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.229 ±0.013
8.10 ±0.20
12.30 ±0.20
D
D2
D1
Direction of Feed
Version : A10