GBU801_1 Datasheet, PDF (2/2 Pages) Taiwan Semiconductor Company, Ltd – Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

RATINGS AND CHARACTERISTIC CURVES (GBU801 THRU GBU807)
FIG.1-MAXIMUM FORWARD CURRENT DERATING
CURVE
10
8
6
4
HEAT-SINK MOUNTG
2
3.2 x 3.2 x 0.12" THK
(8.2 x 8.2 x 0.3 cm)AI. PLATE
0
0
50
100
150
CASE TEMPERATURE. (^oC)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER BRIDGE ELEMENT
200
175
Tj=150 C
150
8.3ms Single Half Sine Wave
125
100
75
50
25
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG.5- TYPICAL FORWARD CHARACTERISTICS
PER BRIDGE ELEMENT
100
40
20
10
FIG.2- TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
500
Tj=150⁰C
100
10
1
50-400V
600-1000V
0.1
Tj=25⁰C
0.01
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.4- TYPICAL JUNCTION CAPACITANCE
1000
600
Tj=25⁰C
500
GBU801-GBU804
400
100
50
GBU805-GBU807
25
0
0.1
0.5 ¹ 2
5 10 20 50 100 200 500 800
REVERSE VOLTAGE. (V)
4
2
1
0.4
0.2
0.1
0.6
Tj=25⁰C
Pulse Width=300ms
1% Duty Cycle
0.7
0.8
0.9
1.0
1.1
1.2
1.3
INSTANTANEOUSFORWARD VOLTAGE. (V)
Version: A06