ESH1B_13 Datasheet, PDF (2/4 Pages) Taiwan Semiconductor Company, Ltd – 1.0AMP Surface Mount Ultra Fast Rectifiers

RATINGS AND CHARACTERISTIC CURVES (ESH1B THRU ESH1D)
FIG.1 FORWARD CURRENT DERATING CURVE
1.2
1
0.8
0.6
0.4
RESISTER OR
0.2
INDUCTIVE LOAD
0
75 85 95 105 115 125 135 145 155 165 175
LEAD TEMPERATURE (^oC)
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
8.3mS Single Half Sine Wave
25
JEDEC Method
20
15
10
5
TA=25℃
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
10
1
TA=25℃
Pulse Width=300us
1% Duty Cycle
0.1
0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
FORWARD VOLTAGE (V)
1000
100
10
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
TA=125℃
TA=75℃
10
TA=25℃
1
0.1
1
10
REVERSE VOLTAGE (V)
1
TA=25℃
0.1
0
20
40
60
80 100 120 140
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Version:B13