ES1AL Datasheet, PDF (2/2 Pages) Taiwan Semiconductor Company, Ltd – 1.0 AMP. Surface Mount Super Fast Rectifiers

RATINGS AND CHARACTERISTIC CURVES (ES1AL THRU ES1JL)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1.2
1.0
0.8
RESISTIVE OR
INDUCTIVE LOAD
0.2X0.2"(5.0X5.0mm)
0.6 ^{COPPER PAD AREAS}
0.4
FIG.2- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
Tj=25⁰C
PULSE WIDTH-300 S
10
1% DUTY CYCLE
1
ES1FL ^{- ES1GL}
0.2
0
80
90
100
110
120
130
140
150
LEAD TEMPERATURE. (^oC)
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
25
8.3ms Single Half Sine Wave
(JEDEC Method) at TL=120^oC
20
0.1
0.01
0.4 0.6
0.8
1.0 1.2
1.4
1.6
1.8
FORWARD VOLTAGE. (V)
15
10
FIG.5- TYPICAL REVERSE CHARACTERISTICS
5.0
1000
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
14
Tj=25⁰C
12
f=1.0MHz
Vsig=50mVp-p
10
ES1AL _{- ES1DL}
8.0
ES1FL _{- ES1JL}
6.0
4.0
2.0
0
0
1
10
100
REVERSE VOLTAGE. (V)
100
Tj=125⁰C
10
Tj=85⁰C
1
Tj=25⁰C
0.1
0.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
50Vdc
(approx)
(-)
DUT
1W
OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
trr
+0.5A
0
-0.25A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
Version: A06