US1MR2 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 1.0AMP. High Efficient Surface Mount Rectifiers

Pb
RoHS
COMPLIANCE
creat by ART
US1A - US1M
1.0AMP. High Efficient Surface Mount Rectifiers
SMA/DO-214AC
Features
— Glass passivated chip junction
— For surface mounted application
— Low profile package
— Built-in strain relief
— Ideal for automated placement
— Easy pick and place
— Ultrafast recovery time for high efficiency
— Low forward voltage, low power loss
— High temperature soldering guaranteed:
260℃/10 seconds on terminals
— Plastic material used carries Underwriters
Laboratory Classification 94V-0
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
— Case: Molded plastic
— Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
— Polarity: Indicated by cathode band
— Weight: 0.064 grams
Dimensions in inches and (millimeters)
Marking Diagram
US1X
= Specific Device Code
G
= Green Compound
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol US1A US1B US1D US1G US1J US1K US1M Unit
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
V_RRM
50 100 200 400 600 800 1000
V
V_RMS
35
70 140 280 420 560 700
V
V_DC
50 100 200 400 600 800 1000
V
Maximum Average Forward Rectified Current
I_F(AV)
1
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
I_FSM
30
Maximum Instantaneous Forward Voltage (Note 1)
@1A
V_F
1.0
1.7
Maximum Reverse Current @ Rated VR T_A=25 ℃
T _A=125 ℃
I_R
Maximum Reverse Recovery Time (Note 2)
Trr
Typical Junction Capacitance (Note 3)
Cj
5
150
50
75
15
10
Typical Thermal Resistance
R_θjA
R_θjL
Operating Temperature Range
T_J
Storage Temperature Range
T_STG
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
75
27
- 55 to + 150
- 55 to + 150
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
A
V
uA
nS
pF
O_C/W
O_C
O_C
Version:G11