UGF8JD Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Isolated Ultra Fast Rectifier

FEATURES
CREAT BY ART
Isolated Ultra Fast Rectifier
UGF8JD
Taiwan Semiconductor
- Especially suited as boost diode on continuous mode power factor correctors
- Ideal Solution for hard switching condition
- High capability for high di/dt operation. Downsizing of mosfet and heatsink
- High surge current capability
- AEC-Q101 qualified (Green compound not involved)
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AC
DESCRIPTION
Especially suited as free wheeling or boost diode in continuous mode
power factor correctors and other power switching applications.
The low stored charge and ultrafast soft recovery minimizes ringing and
electrical noise in power switching circuits. The family drastically cuts losses
in the associated MOSFET when run at high d_IF/dt.
MECHANICAL DATA
Case: ITO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
UGF8JD
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I_F= 8 A
Maximum reverse current @ Rated V_R T_J=25 ℃
T_J=125 ℃
Reverse recovery time
I_F=0.5A, I_RR=0.25A, I_R=1A, T_J=25℃
I_F=1A, dI_F/dt=-50A/us, V_R=30V, T_J=25℃
Reverse recovery charges
I_F=1A, dI_F/dt=-200A/us, V_R=400V, T_J=125℃
I_F=1A, dI_F/dt=-200A/us, V_R=400V, T_J=125℃
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300 μs, 1% duty cycle
V_RRM
I_F(AV)
I_FSM
V_F
I_R
Trr
Qrr
I_RM
R_θJC
T_J
T_STG
600
8.0
100
2.3
0.5
100
TYP
MAX
13
-
-
30
TYP
MAX
90
-
5
5.5
4
- 55 to +150
- 55 to +150
UNIT
V
A
A
V
μA
ns
nC
A
O_C/W
O_C
O_C
Document Number: DS_D1312023
Version: A13