UGF2004G Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Isolated Ultra Fast Rectifiers

UGF2004G thru UGF2008G
Taiwan Semiconductor
CREAT BY ART
Isolated Ultra Fast Rectifiers
FEATURES
- High efficiency, low VF
- High current capability
- High reliability
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
ITO-220AB
- Halogen-free according to IEC 61249-2-21 definition
DESCRIPTION
- UGF200xG series are ideal devices for free wheeling function in switching
mode power supply and high frequency DC/DC converters
- UGF200xG series: their low stored charge and ultrafast soft recovery minimizes
ringing and electrical noise in power switching circuits reducing power loss
MECHANICAL DATA
Case: ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
UGF
SYMBOL
2004G
UGF
2005G
UGF
2006G
UGF
2007G
Maximum repetitive peak reverse voltage
V_RRM
200
300
400
500
Maximum RMS voltage
V_RMS
140
210
280
350
Maximum DC blocking voltage
V_DC
200
300
400
500
Maximum average forward rectified current
I_F(AV)
20
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
150
UGF
2008G
600
420
600
Maximum instantaneous forward voltage (Note 1)
I_F= 10 A
V_F
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
I_R
Maximum reverse recovery time (Note 2)
Trr
Typical thermal resistance
R_θJC
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300 μsec, 1% Duty Cycle
T_J
T_STG
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
0.95
1.25
5
100
20
2
- 55 to +175
- 55 to +175
1.70
25
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
ns
O_C/W
O_C
O_C
Document Number: DS_D1310026
Version: A14