UGA8120 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 1200V Ultrafast Power Rectifier

CREAT BY ART
1200V Ultrafast Power Rectifier
UGA8120
Taiwan Semiconductor
FEATURES
- Ultrafast, Soft Recovery characteristics
- High junction temperature up to 175^oC
- Negligible leakage sustain the high operation temperature
- Planar passivated for voltage ruggedness and reliability
- Very low stored charge and its soft recovery minimize ringing and
electrical noise to reduce power loss in associated MOSFET or IGBT
- High capability for high dI/dt operation.
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-220AC
TYPICAL APPLICATIONS
The UGA8120 is an ideal solution for being used as freewheeling diodes, featuring extremely low peak recovery current to
significantly reduce snubbing, and lowering switching losses in IGBT / MOSFET.
It is especially suited for heavy duty applications with demanding long term reliability such as inverters,
uninterrupted power supplies, motor drives and other mission-critical systems, where high frequency
and high efficiency is being needed.
Another competitive advantage of this device is the negligible leakage for use in high temperature environment.
MECHANICAL DATA
Case: TO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm maximum
Weight: 1.85g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25^oC unless otherwise noted)
PARAMETER
SYMBOL
UGA8120
Maximum repetitive peak reverse voltage
V_RRM
1200
Maximum average forward rectified current
I_F(AV)
8
Non-repetitive peak forward surge current
8.3ms single sine-wave
I_FSM
80
Maximum instantaneous forward voltage (Note 1)
I_F= 8 A
Maximum reverse current @ Rated VR
T_J=25 ^oC
T_J=125 ^oC
Reverse Recovery Time
T_J=25 ^oC, I_F=0.5A, I_R=1A, I_RR=0.25A
T_J=25 ^oC, I_F=1A, dI_F/dt= -100A/µs, V_R=30V
Reverse Recovery Charges
T_J=25 ^oC, I_F=8A, dI_F/dt= -200A/µs, V_R=400V
T_J=125 ^oC, I_F=8A, dI_F/dt= -200A/µs, V_R=400V
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
V_F
I_R
t_rr
Qrr
I_RM
R_θJC
T_J
T_STG
2.8
TYP
MAX
1
5
5
100
TYP
MAX
35
50
50
70
TYP
MAX
165
-
11
16
2.3
- 55 to +175
- 55 to +175
Document Number: DS_D1405001
UNIT
V
A
A
V
μA
ns
nC
A
O_C/W
O_C
O_C
Version: A14