UGA15120 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 15A, 1200V Ultrafast Power Rectifier

CREAT BY ART
15A, 1200V Ultrafast Power Rectifier
UGA15120
Taiwan Semiconductor
FEATURES
- Ultrafast, soft recovery characteristics
- High junction temperature up to 175°C
- Negligible leakage sustain the high operation temperature
- Planar passivated for voltage ruggedness and reliability
- Very low stored charge and its soft recovery minimize ringing and
electronical noise to reduce power loss in associated MOSFET or IGBT
- High capability for high di/dt operation.
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
- AEC-Q101 qualified
1
2
TO-220AC
TYPICAL APPLICATIONS
Ideal solution used as freewheeling diodes , features extremely low peak recovery current helping to significantly reduce
snubbing, and lower switching losses in IGBT, especially as heavy duty applications demanding long term reliability.
Such as inverters , Uninterrupted Power Supply, motor drive and other mission-critical systems
where the high frequency and high efficiency is needed.
The series with negligible leakage, is an immediately competitive advantage for high temperature environment.
MECHANICAL DATA
Case: TO-220AC
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD 22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 0.56 Nm
Weight: 1.7g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
UGA15120
Maximum repetitive peak reverse voltage
V_RRM
1200
Maximum average forward rectified current
I_F(AV)
15
Non-repetitive peak forward surge current
8.3ms single sine-wave
I_FSM
200
Maximum instantaneous forward voltage (Note 1)
IF= 15 A
V_F
2.9
Maximum reverse current @ Rated VR
T_J=25 °C
T_J=125 °C
Reverse Recovery Time
T_J=25 ℃, I_F=0.5A, I_R=1A, I_RR=0.25A
T_J=25 ℃, I_F=1A, dI_F/dt= -100A/µs, V_R=30V
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300 μs, 1% duty cycle
I_R
t_rr
R_θJC
T_J
T_STG
TYP
MAX
1
5
5
100
TYP
MAX
48
58
-
65
2
- 55 to +175
- 55 to +175
UNIT
V
A
A
V
μA
ns
°C/W
°C
°C
Document Number: DS_D1501012
Version: A15