UG2JA Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Surface Mount Ultra Fast Rectifiers

UG2JA
Taiwan Semiconductor
FEATURES
CREAT BY ART
Surface Mount Ultra Fast Rectifiers
- Fast forward recovery time for high frequency operation
- Negligible switching losses
- Ultrafast reverse recovery time
- Reduces switching and conduction losses
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
DO-214AC (SMA)
TYPICAL APPLICATIONS
Designed for high frequency switching mode inverters and converters for consumer,
computers,lighting, automotive and telecommunications.
The low I_RRM is an immediately advantage to reduce the switching losses in associated
of switching devices. Also suitable as priority protection and other rectifications purposes.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.07g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
UG2JA
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
V_RRM
V_RMS
V_DC
I_F(AV)
600
420
600
2
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
40
Maximum instantaneous forward voltage (Note 1)
@2A
V_F
Maximum reverse current @ rated VR
T_J=25 ℃
T_J=125 ℃
I_R
Reverse recovery time (Note 2)
t_rr
Forward recovery time (Note 3)
t_fr
Forward recovery voltage (Note 3)
V_FP
Typical junction capacitance (Note 4)
Cj
Typical thermal resistance
R_θjL
R_θjA
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300 μs, 1% duty cycle
T_J
T_STG
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Forward Recovery Test Conditions: I_F=2A, dI_F/dt = 100A/µs, V_FR =1.1 x V_Fmax
Note 4: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
1.30
2
50
Typ.
Max.
40
55
Typ.
Max.
-
100
-
9
20
25
70
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
ns
ns
V
pF
O_C/W
O_C
O_C
Document Number: DS_D1404007
Version: A14