UF1A_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Glass Passivated High Efficient Rectifiers

UF1A thru UF1M
Taiwan Semiconductor
CREAT BY ART
Glass Passivated High Efficient Rectifiers
FEATURES
- Glass passivated chip junction
- Excellent high temperature switching
- ldally suited for use in very high frequency
switching power supplies, inverters and as free
wheeling diodes
- Ultrafast recovery time for high efficiency
- Soft recovery characteristics
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
DO-204AL (DO-41)
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight: 0.33g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL UF1A UF1B UF1D UF1G UF1J UF1K UF1M
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
V_RRM
V_RMS
V_DC
I_F(AV)
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
30
UNIT
V
V
V
A
A
Maximum instantaneous forward voltage (Note 1)
@1A
V_F
1.0
1.7
V
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
I_R
Maximum reverse recovery time (Note 2)
Trr
Typical junction capacitance (Note 3)
Cj
Typical thermal resistance
R_θJL
R_θJA
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T_J
T_STG
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
5
150
50
75
17
15
60
- 55 to +150
- 55 to +150
μA
ns
pF
O_C/W
O_C
O_C
Document Number: DS_D1405072
Version: F14