TSM3460_07 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 20V N-Channel MOSFET w/ESD Protected

TSM3460
20V N-Channel MOSFET w/ESD Protected
SOT-26
Pin Definition:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
22 @ V_GS = 4.5V
20
40 @ V_GS = 2.5V
60 @ V_GS = 1.8V
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
● ESD Protect 2KV
Application
● Specially Designed for Li-on Battery Packs
● Battery Switch Application
Ordering Information
Block Diagram
Part No.
TSM3460CX6 RF
Package
SOT-26
Packing
3Kpcs / 7” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM
Continuous Source Current (Diode Conduction)^a,b
I_S
Maximum Power Dissipation
Ta = 25^oC
Ta = 75^oC
P_D
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T_J
T_J, T_STG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Symbol
RÓ¨_JF
RÓ¨_JA
Limit
20
±12
6
30
1.4
1.3
0.96
+150
-55 to +150
Limit
30
80
I_D (A)
6
5
2
Unit
V
V
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
1/6
Version: B07