TSM3460 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 20V N-Channel MOSFET w/ESD Protected

TSM3460
20V N-Channel MOSFET w/ESD Protected
Pin assignment:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
V_DS = 20V
R_{DS (on)}, Vgs @ 4.5V, Ids @ 6A =22mΩ (typ.)
R_{DS (on)}, Vgs @ 2.5V, Ids @ 5A =30mΩ (typ.)
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Specially designed for Li-ion battery packs.
Battery switch application
Block Diagram
Ordering Information
Part No.
TSM3460CX6
Packing
Tape & Reel
3,000/per reel
Package
SOT-26
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @4.5V.
Ta = 25 ^oC
Ta = 70 ^oC
Pulsed Drain Current, V_GS @4.5V
Diode Forward Current
Maximum Power Dissipation
Ta = 25 ^oC
Ta = 70 ^oC
Operating Junction and Storage Temperature Range
Thermal Performance
Symbol
V_DS
V_GS
I_D
I_D
I_DM
Is
P_D
T_J, T_STG
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=300uS, Duty < 2%.
Symbol
Rθjf
Rθja
Limit
20V
± 12
6
5
30
1.5
1.3
0.96
- 55 to +150
Limit
35
120
Unit
V
V
A
A
A
A
W
o_C
Unit
o_C/W
o_C/W
TSM3460
1-1
2003/12 rev. F