TSM3457_14 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 30V P-Channel MOSFET

TSM3457
30V P-Channel MOSFET
SOT-26
Pin Definition:
1. Drain
6. Drain
2. Drain
5. Drain
3. Gate
4. Source
Key Parameter Performance
Parameter
Value
V_DS
-30
V_GS = -10V
60
R_DS(on) (max)
V_GS = -4.5V 100
Q_g
9.52
Unit
V
mΩ
nC
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Ordering Information
Block Diagram
Part No.
Package
Packing
TSM3457CX6 RF
SOT-26
3kpcs / 7” Reel
TSM3457CX6 RFG
SOT-26
3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
P-Channel MOSFET
Absolute Maximum Ratings (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction) ^{(Note 1,2)}
Maximum Power Dissipation
T_A =25^oC
T_A=70^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J
T_J, T_STG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Symbol
R_Ó¨JC
R_Ó¨JA
Limit
-30
±20
-5
-20
-1.7
2.0
1.3
+150
- 55 to +150
Limit
30
80
Unit
V
V
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
1/6
Version: C14