TSM3443 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 20V P-Channel Enhancement-Mode MOSFET

SOT-26
TSM3443
Preliminary
-20V P-Channel Enhancement-Mode MOSFET
Pin assignment:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
V_DS = -20V
R_{DS (on)}, Vgs @ -4.5V, Ids @ -4.7A =60mΩ
R_{DS (on)}, Vgs @ -2.5V, Ids @ -3.7A =100mΩ
Features
 Advanced trench process technology
 High density cell design for ultra low on-resistance
 Fully Characterized Avalanche Voltage and Current
 Improved Shoot-Through FOM
Block Diagram
P-Channel MOSFET
Ordering Information
Part No.
TSM3443CX6
Packing
Tape & Reel
3,000/per reel
Package
SOT-26
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,
Pulsed Drain Current,
Maximum Power Dissipation
Ta = 25 ^oC
Ta = 70 ^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Performance
Symbol
VDS
VGS
ID
IDM
PD
TJ
TJ, TSTG
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
Symbol
Rθjf
Rθja
Limit
-20V
±12
-4.7
-20
2
1.3
+150
- 55 to +150
Limit
30
50
Unit
V
V
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
TSM3443 Preliminary
1-3
2006/02 rev. A