TSM3442_15 Datasheet, PDF (1/7 Pages) Taiwan Semiconductor Company, Ltd – N-Channel Power MOSFET

TSM3442
Taiwan Semiconductor
N-Channel Power MOSFET
20V, 4A, 70mΩ
FEATURES
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
APPLICATION
● Load Switch
● PA Switch
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
V_DS
20
V
V_GS = 4.5V
70
R_DS(on) (max)
V_GS = 2.5V
90
mΩ
Q_g
5.4
nC
SOT-26
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^{(Note 1)}
Pulsed Drain Current ^{(Note 2)}
T_C = 25°C
T_C = 100°C
Total Power Dissipation @ T_C = 25°C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
P_DTOT
T_J, T_STG
20
±8
4
2.4
8
1.25
- 55 to +150
UNIT
V
V
A
A
W
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
R_Ó¨JC
30
°C/W
Junction to Ambient Thermal Resistance
R_Ó¨JA
80
°C/W
Notes: RÓ¨JA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RÓ¨JA shown below for single device operation on FR-4 PCB in still air
,
Document Number: DS_P0000076
1
Version: B15