TSM3441_07 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 20V P-Channel MOSFET

TSM3441
20V P-Channel MOSFET
SOT-26
Pin Definition:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
-20
90 @ V_GS = -4.5V
110 @ V_GS = -2.5V
I_D (A)
-3.3
-2.9
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Block Diagram
Part No.
Package
Packing
TSM3441CX6 RF SOT-26 3Kpcs / 7” Reel
P-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current, V_GS @4.5V.
I_D
Pulsed Drain Current, V_GS @4.5V
I_DM
Continuous Source Current (Diode Conduction)^a,b
I_S
Maximum Power Dissipation
Ta = 25^oC
Ta = 70^oC
P_D
Operating Junction Temperature
T_J
Operating Junction and Storage Temperature Range
T_J, T_STG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Symbol
RÓ¨_JC
RÓ¨_JA
Limit
-20
±8
-3.3
-10
-0.72
1.25
0.8
+150
- 55 to +150
Limit
30
80
Unit
V
V
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
1/6
Version: A07