TSM3433 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 20V P-Channel MOSFET

TSM3433
20V P-Channel MOSFET
SOT-26
Pin Definition:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
42 @ V_GS = -4.5V
-20
57 @ V_GS = -2.5V
80 @ V_GS = -1.8V
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Block Diagram
Part No.
Package
Packing
TSM3433CX6 RF SOT-26 3Kpcs / 7” Reel
P-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM
Continuous Source Current (Diode Conduction)^a,b
I_S
Maximum Power Dissipation
Ta = 25^oC
Ta = 70^oC
P_D
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T_J
T_J, T_STG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RÓ¨_JC
RÓ¨_JA
Limit
-20
±8
-5.6
-20
-1.7
2.0
1.0
+150
- 55 to +150
Limit
30
80
I_D (A)
-5.6
-4.8
-1.4
Unit
V
V
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
1/6
Version: A07